Short circuit detecting circuit and abnormality monitoring...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of ground fault indication

Reexamination Certificate

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C324S522000

Reexamination Certificate

active

11142428

ABSTRACT:
In order to drive an L load, FETs are disposed so as to be mirror-paired with FETs disposed at the power source side and the ground side respectively, and currents corresponding to mirrored currents of first and second currents flowing in FETs are made to flow in current mirror circuits, and the mirror ratio of the former is set so that the current ratio of the first current ratio is large, and the mirror ratio of the latter is set so that the current ratio of the second current side is large. When the first current is larger than the second current, the current flowing in the transistor through the mirror circuit is increased to set the transistor to a conducting state, and when the second current is larger than the first current, the current flowing in the transistor through the mirror circuit is increased to set the transistor to a conducting state.

REFERENCES:
patent: 4780625 (1988-10-01), Zobel
patent: 5146159 (1992-09-01), Lau et al.
patent: 6377053 (2002-04-01), Mazzucco et al.
patent: 6710603 (2004-03-01), Gregorius
patent: 6794880 (2004-09-01), Tucker
patent: 2003/0151411 (2003-08-01), Tucker
patent: 2004/0061534 (2004-04-01), Yamamoto
patent: 2006/0082376 (2006-04-01), Allen et al.
patent: A-2000-293201 (2000-10-01), None

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