Short-channel V-groove complementary MOS device

Details Short-channel V-groove complementary MOS device Short-channel V-groove complementary MOS device

1977-09-28

1978-12-26

Wojciechowicz, Edward J.

357 22, 357 23, 357 55, H01L 2702

Patent

active

041319079

ABSTRACT:
An improved short-channel complementary MOS transistor structure is provided. The problems of low punch-through voltage breakdown, and "short-channel effects" are particularly addressed and solved. Accurate and precise field protection of all area surrounding the channel, source and drain regions of both the p-channel MOS transistor device and the n-channel transistor device is simply and effectively accomplished. The threshold voltage of the n-channel MOS transistor device is precisely controlled by a boron implantation.
The method of manufacturing such device is disclosed.

REFERENCES:
patent: 3975752 (1976-08-01), Nicolay
Electronics - Jan. 6, 1977 - p. 72.

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