Short-channel field effect transistor

Details Short-channel field effect transistor Short-channel field effect transistor

1983-11-25

1988-03-01

James, Andrew J.

357 234, 357 20, H01L 2978, H01L 2908

Patent

active

047290013

ABSTRACT:
An improved short-channel field effect transistor including a standard tip implant type of source and drain each disposed in the surface of a semiconductor substrate and a gate electrode positioned upon the substrate between the source and drain and control plugs disposed in the substrate and associated with and contiguous to the source and drain for eliminating substrate punch-through currents without substantially increasing the device junction capacitance.

REFERENCES:
patent: 4334235 (1982-06-01), Nishizawa
Shannon et al. "MOS Frequency Soars with Ion Implanted Layers" Electronics, 2-3-69, pp. 97-100.

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