Short channel CMOS device capable of high performance at low vol

Details Short channel CMOS device capable of high performance at low vol Short channel CMOS device capable of high performance at low vol

1992-07-29

1994-07-12

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is selenium or tellurium in elemental form

257345, 257403, 257338, 257296, H01L 29804, H01L 29792, H01L 2978

Patent

active

053291387

ABSTRACT:
Herein disclosed is a CMOSFET, in which an n-channel MISFET Qn has a gate electrode 11n made of n-type polycrystalline silicon, in which a p-channel MISFET Qp has a gate electrode 11p made of p-type polycrystalline silicon, In which the n-channel MISFET Qn and the p-channel MISFET Qp have their respective channel regions formed with heavily doped impurity layers 12p and 12n having the conductivity types identical to those of their wells 3 and 2, and in which the individual heavily doped impurity layers 12p and 12n have their respective surfaces formed with counter-doped layers 13n and 13p having the opposite conductivity types.

REFERENCES:
patent: 4784968 (1987-07-01), Kumori et al.
patent: 5166765 (1991-08-01), Lee et al.
A High Performance Sub-Half Micron CMOS Technology for Fast SRAMS, J. Hayden et al, 1989 IEEE.

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