Shootthrough fault protection system for bipolar transistors in

Details Shootthrough fault protection system for bipolar transistors in Shootthrough fault protection system for bipolar transistors in

1979-09-28

1982-01-12

Salce, Patrick R.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361111, 361 93, 361 58, 363 53, 363132, H02H 7122

Patent

active

043108660

ABSTRACT:
Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over the d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors.

REFERENCES:
patent: 3321697 (1967-05-01), Etter
patent: 4068293 (1978-01-01), Staruch et al.
patent: 4099225 (1978-07-01), Nygaard

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