Shinged structures for vacuum microelectronics and methods...

Details Shinged structures for vacuum microelectronics and methods... Shinged structures for vacuum microelectronics and methods...

2006-06-27

2006-06-27

Wong, Don (Department: 2821)

Electric lamp and discharge devices: systems

Combined load device or load device temperature modifying...

Discharge device load with distributed parameter-type...

C315S003500

Reexamination Certificate

active

07067980

ABSTRACT:
An improved Klystron device is disclosed which has opposed electrostatic (ES) magnetic field generating members which are uniformly spaced along a longitudinal axis to form an electron beam chamber. The ES magnetic field generating members produce a magnetic flux which confines an electron beam passing through the chamber when an alternating current (AC) is imposed upon the magnetic field generating members. An additional improvement includes a chamber formed from a single sheet of electron conductive metal having a ladder-like structure symmetrical about a longitudinal hinge which permits the structure to be folded about the hinge to form a suitable electron beam chamber.

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