Shift register utilizing amorphous semiconductor threshold switc

Details Shift register utilizing amorphous semiconductor threshold switc Shift register utilizing amorphous semiconductor threshold switc

1975-04-25

1976-10-19

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 2, 357 28, 307310, G11C 1928

Patent

active

039873110

ABSTRACT:
A shift register that utilizes a plurality of amorphous semiconductor threshold switches. The shift register is driven by a two phase clock with odd-numbered threshold switches being supplied a pulse waveform of one phase and even-numbered threshold switches being supplied a pulse waveform of a different phase. The threshold switches have a V-I characteristic that is strongly temperature dependent and each is heated by a heating element which can take the form of an amorphous semiconductor current controlled negative differential resistance device, with the current controlled negative differential resistance devices and the threshold switches fabricated simultaneously on a common substrate.

REFERENCES:
patent: 2991374 (1961-07-01), De Miranda et al.
patent: 3020410 (1962-02-01), Bowerman
patent: 3469154 (1969-09-01), Scholer
patent: 3573438 (1971-04-01), Rowen

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