Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2011-08-16
2011-08-16
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257SE23114
Reexamination Certificate
active
07999361
ABSTRACT:
A shielding structure comprises first and second comb-like structures defined in a first metallization layer on an integrated circuit, each comb-like structure comprising a plurality of teeth, the teeth of each comb-like structure extending toward the other comb-like structure; a first plurality of electrically conducting vias extending upward from the first comb-like structure; a second plurality of electrically conducting vias extending upward from the second comb-like structure; first and second planar structures in a second metallization layer above the first metallization layer; a third plurality of electrically conducting vias extending downward from the first planar structure toward the first plurality of electrically conducting vias; and a fourth plurality of electrically conducting vias extending downward from the second planar structure toward the second plurality of electrically conducting vias. The first and second comb-like structures, the first and second planar structures and the first, second, third, and fourth electrically conducting vias all being at substantially the same potential, preferably ground. In one embodiment, one or more signal lines are located in the second metallization layer between the first and second planar structures; and in another embodiment they are located in a third metallization layer between the first and second metallization layers.
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Chen Shuxian
Watt Jeffrey T.
Altera Corporation
Ha Nathan W
Ward & Zinna, LLC
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