Shielded micro sensor and method for electrochemically...

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Parameter related to the reproduction or fidelity of a...

Reexamination Certificate

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C324S629000, C324S628000

Reexamination Certificate

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07317317

ABSTRACT:
The micro sensor is fabricated with a guard that shields the electrodes from the surrounding environment, thereby reducing loss of measurement signal through the parasitic capacitances to the substrate and fluid. The guards are low impedance points in the circuit that are biased to track as closely as possible the ac voltages of the respective electrodes. Each guard is suitably connected to the output of a guard buffer that supplies the current required to ensure that the guard is at all times at nearly the same voltage as the electrode it is guarding. The micro sensor has an improved signal to noise ratio (SNR) over an extended measurement frequency range (bandwidth) for monitoring in-situ the cleaning and drying processes for high aspect ratio micro features in dielectric films oriented perpendicular to the fluid-solid interface during the manufacture of ICs, MEMS and other micro-devices.

REFERENCES:
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patent: 6145384 (2000-11-01), Ikeda et al.
patent: 6903918 (2005-06-01), Brennan
patent: 2004/0245580 (2004-12-01), Lin
K. Romero et al “In-situ analysis of wafer surface and deep trench rinse,” Cleaning Technology in Semiconductor Device Manufacturing VI, The Electrochemical Society, 2000.
A.D. Hebda et al, “Fundamentals of UPW rinse: analysis of chemical removal from flat and patterned wafer surfaces” Cleaning Technology in Semiconductor Device Manufacturing VI, The Electrochemical Society, 2000.
J.Yan et al. “Test Structures for Analyzing Mechanisms of Wafer Chemical Contaminant Removal”, IEEE International Conference on Microelectronic Test Structures, pp. 209-213, Mar. 2003.

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