Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-02-08
2010-11-30
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S503000, C257S025000, C257SE23179, C257SE23192, C257SE23145, C257SE29042, C257SE29341, C257SE23002, C257SE23052, C257SE23194
Reexamination Certificate
active
07843033
ABSTRACT:
An integrated circuit pad structure includes a ground strip (206) positioned below a pad (101). In one example a conductive element (102) is coupled to the pad (101), and at least two tiled layers, positioned below the first conductive element (102) and positioned above the ground strip (206) are included. A conductor (203), may run beneath the ground strip (206). In a second example, a pad (101) is seated on a ground shield cage having a bottom conductive ground element (302) including several ground strips where at least one ground strip (116) is along a signal routing path. The ground shield cage further includes a set of stacked conductive ground elements, stacked to form sidewalls (209, 210) of the cage. The top conductive ground element (301) of the stacked elements has an inner perimeter and an outer perimeter, such that the inner perimeter surrounds the pad (101) and the top conductive ground element (301) is in the plane of the conductive element (102) coupled to the pad (101).
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PCT Application No. PCT/US2009/030512; Search Report and Written Opinion; mailed Aug. 28, 2009.
Harr David B.
Mondal Jyoti P.
Freescale Semiconductor Inc.
Tran Long K
Vedder Price P.C.
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