Shield type magnetoresistive head arranged for weakening of a ga

Dynamic magnetic information storage or retrieval – Head – Hall effect

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G11B 539

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active

058186840

ABSTRACT:
A shield type magnetoresistive head has a GMR element exhibiting a giant magentoresistance effect phenomenon due to a spin dependent scattering, and an electrode, the GMR element comprising upper and lower shield films, upper and lower gap insulation films, a magnetic field detecting layer in which a magnetization rotates by a signal magnetic field, a non-magnetic layer, a magnetization fixed layer in which the magnetization is substantially not moved by the signal magnetic field, and a bias film contacting to the magnetization fixed layer, wherein a distance from a film-thicknesswise center of the magnetic field detecting layer to a surface of the shield film contacting to the gap film including the magnetization fixed layer is set to be greater compared with that on a side of not including the magnetization fixed layer.

REFERENCES:
patent: 5438470 (1995-08-01), Ravipati et al.
patent: 5563752 (1996-10-01), Komuro et al.
patent: 5576914 (1996-11-01), Rottmayer et al.
patent: 5585199 (1996-12-01), Kamiguchi et al.
patent: 5608593 (1997-03-01), Kim et al.

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