Shield junction thin film transistor structure

Details Shield junction thin film transistor structure Shield junction thin film transistor structure

2007-01-09

2007-01-09

Ngo, Huyen (Department: 2871)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C349S046000, C257S059000, C430S030000

Reexamination Certificate

active

10918983

ABSTRACT:
The present invention provides a Shield-Junction thin film transistor structure. According to the structure of the present invention, on top of the passivation layer, there is an island of protection electrode electrically insulated from the bottom ITO electrode. The protection electrode electrically connects with the gate line through a via hole and covers part of the drain electrode and its adjacent part of the TFT channel. Since the protection electrode does not cover or overlap with the source electrode, it has a negligible contribution to the data-line capacitance.

REFERENCES:
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patent: 6219118 (2001-04-01), Zhang
patent: 6927809 (2005-08-01), Gotoh et al.
patent: 2003/0197182 (2003-10-01), Kim et al.
patent: 2005/0110716 (2005-05-01), Eida
patent: 2005/0112876 (2005-05-01), Wu et al.
patent: 404069622 (1992-03-01), None

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