Sheet-type β-FeSi 2 element, and method and device...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S184000, C257S448000, C257S643000

Reexamination Certificate

active

06943388

ABSTRACT:
In the air or in an inert gas atmosphere, powder raw materials are deposited on a flexible sheet for forming a film, an electrode, and a protective film under pressing a heating roller, and a device can be manufactured by continuous operations in which all the steps are integrated. There is provided a cheap device, by which the manhours for manufacturing a device is reduced, the throughput is improved in comparison with those of a previous device by which a film, an electrode, and a protective film have been manufactured on a crystal substrate in a vacuum.

REFERENCES:
patent: 6288415 (2001-09-01), Leong et al.
patent: 2004/0203220 (2004-10-01), Morooka et al.
patent: 2002-353526 (2002-12-01), None
patent: 2003-051462 (2003-02-01), None
patent: 2003-258321 (2003-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sheet-type β-FeSi 2 element, and method and device... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sheet-type β-FeSi 2 element, and method and device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sheet-type β-FeSi 2 element, and method and device... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3430688

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.