Metal working – Barrier layer or semiconductor device making
Reexamination Certificate
2006-04-18
2006-04-18
Fourson, George (Department: 2823)
Metal working
Barrier layer or semiconductor device making
C118S72300R, C118S724000, C118S725000, C432S103000, C432S152000, C432S250000
Reexamination Certificate
active
07029505
ABSTRACT:
The single substrate thermal processing apparatus (2) includes a process chamber (5) arranged to accommodate a target substrate (W) and provided with a showerhead (10) disposed on its ceiling. A support member (28) is disposed to support the target substrate (W) so as for it to face the showerhead (10), when the target substrate (W) is subjected to a semiconductor process. A heating lamp (30) is disposed below the support member (28), for radiating light to heat the target substrate (W). The support member (28) and heating lamp (30) are moved up and down together relative to the showerhead (10) by an elevator mechanism (20). The elevator mechanism (20) sets different distances between the showerhead (30) and heating lamp (10), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead (10) to fall in a predetermined range.
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Li Yicheng
Sha Lin
Shao Shou-Qian
Fourson George
Pham Thanh V.
Tokyo Electron Limited
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