Sheet random access memory

Static information storage and retrieval – Magnetic bubbles – Detectors

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365 2, 365 53, 365 62, 365170, G11C 1102

Patent

active

047916044

ABSTRACT:
A sheet random access memory (SHRAM) is a truly random access, nonvolatile and transportable memory characterized by the cell density, size and power requirements of smaller dynamic memories but having the nonvolatile character of core memories or magnetic disks and tape and the rugged transportability of magnetic disk and tape. The SHRAM is characterized by a memory media comprising a two dimensional magnetic substrate and a fixed driving device for writing and reading into the substrate and a fixed sensing device for sensing the information at each cell location. In one embodiment the fixed sensing device is a sensing line in close proximity to a cell location. In a second embodiment, a fixed sensing device includes a Hall effect device which senses the magnetic configuration of the cell. In a third embodiment, the fixed sensing device includes an SCS thyristor in which the cathode gate is coupled to the magnetic configuration of the cell. The memory media includes not only a homogeneous two dimensional substrate, but also ferrite cores formed into the substrate by photolithographic techniques wherein the information is stored within the core and read by the sensing device from a gap defined by the core. Memory cells according to the invention can thus be arranged and organized to form destructive readout RAMs, or nondestructive readout RAMs, in both serial and parallel form.

REFERENCES:
patent: 3651311 (1972-03-01), Berezin et al.
patent: 3701126 (1972-10-01), Reichard
patent: 3852725 (1974-12-01), Ogura et al.
patent: 4027300 (1977-05-01), Braun

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sheet random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sheet random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sheet random access memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2200953

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.