Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2007-05-22
2007-05-22
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S201000, C257S289000, C257SE33004, C257S073000
Reexamination Certificate
active
11098420
ABSTRACT:
The invention provides a sheet for optical-semiconductor element encapsulation, which has a multilayer structure including at least two resin layers. The at least two resin layers include: (A) an outermost resin layer (layer A) that is to be brought into contact with one or more optical semiconductor elements; and (B) a resin layer (layer B) disposed on the layer A and having a lower refractive index than that of the layer A. Also disclosed is a process for producing an optical semiconductor device using the sheet.
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European Search Report dated Aug. 12, 2005.
Harada Noriaki
Hotta Yuji
Sadayori Naoki
Suehiro Ichirou
Nhu David
Sughrue & Mion, PLLC
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