Shared bit line cross-point memory array incorporating P/N...

Details Shared bit line cross-point memory array incorporating P/N... Shared bit line cross-point memory array incorporating P/N...

2005-08-09

2005-08-09

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S316000, C257S319000, C438S059000, C438S381000, C438S390000

Reexamination Certificate

active

06927430

ABSTRACT:
A shared bit line cross-point memory array structure is provided, along with methods of manufacture. The memory structure comprises a bottom word line with a top word line overlying the bottom word line. A bit line is interposed between the bottom word line and the top word line such that a first cross-point is formed between the bottom word line and the bit line and a second cross-point is formed between the bit line and the top word line. A resistive memory material is provided at each cross-point above and below the bit line. A diode is formed at each cross-point between the resistive memory material and either the top word line or the bottom word line, respectively.

REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6525953 (2003-02-01), Johnson
patent: 6584029 (2003-06-01), Tran et al.
Article entitled, “Electric-pulse-induced reversible resistance change effect in magnetoresistive films” by S. Q. Liu, N. J. Wu, and A. Ignatiev; published in Applied Physics Letters on May 8, 2000, vol 76, num. 19, pp. 2749-2751.

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