Shaped polycrystalline silicon carbide articles and isostatic ho

Details Shaped polycrystalline silicon carbide articles and isostatic ho Shaped polycrystalline silicon carbide articles and isostatic ho

1984-08-29

1986-01-14

Bell, Mark L.

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

501 90, 264 65, C04B 3556

Patent

active

045646015

ABSTRACT:
The invention is substantially pore-free shaped articles which consist essentially of polycrystalline .alpha.- or .beta.-silicon carbide in the form of a single-phase homogeneous microstructure having grain sizes not exceeding 8 .mu.m, and which are manufactured from SiC powder, without the concomitant use of sintering aides, by isostatic hot-pressing in a vacuum-tight casing at temperatures of from about 1900.degree. C. to 2300.degree. C. and at pressures of from about 100 to 400 MPa. The SiC starting materials have .alpha.- and/or .beta.-SiC powders having a total content of metallic impurities not exceeding 0.1% by weight and a particle size of 4 .mu.m and finer.

REFERENCES:
patent: 4105455 (1978-08-01), Koga et al.
patent: 4230497 (1980-10-01), Schwetz et al.
patent: 4310481 (1982-01-01), Baney
patent: 4310482 (1982-01-01), Baney
patent: 4326039 (1982-04-01), Kriegesman et al.
patent: 4381931 (1983-03-01), Hunold et al.

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