Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1983-01-26
1986-04-08
Niebling, John F.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
118673, 118728, 156345, 204192R, 313156, C23C 1450, C23C 1436
Patent
active
045811180
ABSTRACT:
A substrate support electrode for use in plasma processing equipment has a book-shaped prismatic body containing a magnet core with flange-like pole pieces at each end to provide a longitudinal magnetic field wrapped around the electrode body. An auxiliary field-shaping magnet spaced from a substrate support face of the electrode body, with each of its poles adjacent to the pole piece electrode body with each of its poles adjacent to the of like polarity of the electrode, flattens the magnetic field adjacent to the electrode support surface to produce a thin plasma of substantially uniform thickness close to the electrode surface.
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Yasuhiro Horiike et al., High Rate Reactive Ion Etching Using Magnetron Discharge, Toshiba Research and Development Center, paper presented at Advanced Plasma Technology Conference and Seminar, Honolulu, Hawaii, Jan. 26-28, 1982, 19 pages.
Class Walter H.
Hurwitt Steven D.
I Lin
Leader William T.
Materials Research Corporation
Niebling John F.
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