Shaped emitters with buried-junction structure

Details Shaped emitters with buried-junction structure Shaped emitters with buried-junction structure

1975-10-02

1977-07-19

Lynch, Michael J.

357 89, 357 55, H01L 3300

Patent

active

040372413

ABSTRACT:
Disclosed is a radiation emitting diode in which a first layer of N-type GaAs and a second layer of N-type GaAlAs are formed on an N-type GaAs substrate. A localized zinc diffused region extends through the second layer and partially into the first layer to form a buried junction. Because of the higher bandgap energy of GaAlAs than of GaAs, the current density in the GaAlAs portion of the p-n junction is greatly reduced compared to that in the GaAs portion and the non-radiative surface components of current are greatly reduced. This results in a buried junction structure in which the radiation emitting region is removed from the surface. The buried junction structure provides devices having improved linearity of the radiant output power versus current characteristics and reduced degradation of radiant output power at constant current with time.

REFERENCES:
patent: 3780358 (1973-12-01), Thompson
patent: 3783351 (1974-01-01), Tsukada et al.
patent: 3915765 (1975-10-01), Cho et al.
patent: 3936855 (1976-02-01), Goell et al.
Potemski et al., "Method for Making Hemispheres", IBM Technical Disclosure Bulletin, vol. 15, No. 1, June 1972, pp. 147-148.
Susaki et al., "A New Geometry Double-Heterostructure Injection Laser for Room-Temperature Continuous Operation; Junction-Stripe-Geometry DH Lasers," J. Appl. Phys., vol. 44, No. 6, June 1973, pp. 2893-2894.
Ikeda et al. "GaAs-(Ga,Al)As Double Heterostructure Light Emitting Diode", IEE Transactions on Electron Devices, Sept. 1975, pp. 799-801.

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