Shallow trench power MOSFET and IGBT

Details Shallow trench power MOSFET and IGBT Shallow trench power MOSFET and IGBT

2006-06-20

2006-06-20

Vu, David (Department: 2818)

Chemistry: molecular biology and microbiology

Process of utilizing an enzyme or micro-organism to destroy...

Treating animal or plant material or micro-organism

C257S341000

Reexamination Certificate

active

07063975

ABSTRACT:
A power semiconductor device includes a substrate having an upper surface and a lower surface. The substrate has a trench. First and second doped regions are provided proximate the upper surface of the substrate. A first source region is provided within the first doped region. A second source region is provided within the second doped region. A gate is provided between the first and second source regions. The gate includes a first portion extending downward into the trench. A depth of the trench is no more than a depth of the first doped region.

REFERENCES:
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patent: 5187117 (1993-02-01), Zommer
patent: 5629543 (1997-05-01), Hshieh et al.
patent: 5629552 (1997-05-01), Zommer
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 6133587 (2000-10-01), Takeuchi et al.

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