Shallow trench isolation with oxide-nitride/oxynitride liner

Details Shallow trench isolation with oxide-nitride/oxynitride liner Shallow trench isolation with oxide-nitride/oxynitride liner

1997-01-28

1998-06-09

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, 438437, 438296, H01L 2176

Patent

active

057633150

ABSTRACT:
Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)
itride layer. Such a process and liner has an improved process window as well as being an effective O.sub.2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.

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M. R. Poponiak and P. J. Tsang, "Formation of Thick Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z On Substrate By Anodnitridization", IBM Technical Disclosure Bulletin, vol. 19, No. 03, Aug. 1976, p. 905.

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