Shallow trench isolation using antireflection layer

Details Shallow trench isolation using antireflection layer Shallow trench isolation using antireflection layer

2006-06-13

2006-06-13

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257SE21546, C257SE21549

Reexamination Certificate

active

07061075

ABSTRACT:
A film stack for forming shallow trench isolation among transistors and other devices on a semiconductor substrate is provided, including a plurality of light absorbing layers alternating between a layer of SiON and a layer of SiO2and having a combined extinction coefficient >0.5. As reflected light interacts with the light absorbing layers, a substantial amount of light is absorbed therein thereby blocking such reflected light from negatively interfering with patterning of the photoresist during photo-lithography. Following patterning of the photoresist, isolation trenches may be formed in the semiconductor substrate by etching through the light absorbing layers and into the semiconductor substrate in accordance with the pattern formed on the photoresist.

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