Shallow trench isolation type semiconductor device and...

Details Shallow trench isolation type semiconductor device and... Shallow trench isolation type semiconductor device and...

2006-12-05

2006-12-05

Richards, N. Drew (Department: 2815)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S294000, C438S295000, C257SE21545

Reexamination Certificate

active

07144790

ABSTRACT:
A shallow trench isolation type semiconductor device is described, which includes a trench having a flexure in a bottom thereof. The flexure has a step difference of about 100 Å or more, and is preferably made at a middle area. Conventionally, a gate insulating layer includes a thin area of about 100 Å or less and a thick area of about 200 Å or more. On the basis of a bottom of a trench peripheral region, a middle part of the flexure may be concave or convex. Particularly, the foregoing device can effectively be applied to a self-aligned flash memory in which a width of a trench between one active region and another is about 3 micrometers or less.

REFERENCES:
patent: 5498891 (1996-03-01), Sato
patent: 5646052 (1997-07-01), Lee
patent: 6255689 (2001-07-01), Lee
patent: 6365952 (2002-04-01), Akram

Affiliated with

Also associated with

Rating

Shallow trench isolation type semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Shallow trench isolation type semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shallow trench isolation type semiconductor device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3665791