Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1998-12-07
2000-06-27
Bowers, Charles
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438296, 438425, 438426, 148DIG50, H01L 2176
Patent
active
060806370
ABSTRACT:
A process for creating an insulator filled, shallow trench, in a semiconductor substrate, in which the insulator layer in the shallow trench, is not exposed to procedures used to remove defining composite insulator layers, has been developed. The process features creating a lateral recess, in a thick silicon nitride layer, used as a component of a composite insulator layer, where the composite insulator layer is used for subsequent definition of the shallow trench, in the semiconductor substrate. An insulator deposition, filling openings, and recesses, in the composite insulator layer, and filling the shallow trench, followed by removal of excess insulator fill, on the top surface of the composite insulator layer, results in the formation of a "T" shape insulator, comprised of an insulator shape, in the shallow trench, and comprised of a wider insulator shape, located in the composite insulator shape, with the lateral recess in the thick silicon nitride layer, and with the wider insulator shape, overlying the narrow, insulator shape, in the shallow trench. The insulator, in the shallow trench, is protected from the procedure used to remove components of the composite insulator layer, by the wider insulator shape.
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Chiang Wen-Chuan
Huang Kuo Ching
Shih Cheng-Yeh
Ying Tse-Liang
Ackerman Stephen B.
Blum David S
Bowers Charles
Saile George O.
Taiwan Semiconductor Manufacturing Company
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