Shallow trench isolation technique

Details Shallow trench isolation technique Shallow trench isolation technique

1995-09-29

1998-02-17

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, 438437, 438296, 148DIG50, H01L 2176

Patent

active

057190852

ABSTRACT:
A method of forming a trench isolation region. The method of the present invention comprises the steps of forming an opening in a semiconductor substrate, oxidizing the opening a first time, and then etching the oxidized opening with a wet etchant comprising HF. The opening is then oxidized a second time.

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patent: 4073054 (1978-02-01), Kaji et al.
patent: 4506434 (1985-03-01), Ogawa et al
patent: 5100822 (1992-03-01), Mitani
patent: 5258332 (1993-11-01), Horioka et al.
patent: 5453395 (1995-09-01), Water Lur
patent: 5455194 (1995-10-01), Vasquez et al.
patent: 5578518 (1996-11-01), Koike et al.

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