Shallow trench isolation structures having uniform and...

Details Shallow trench isolation structures having uniform and... Shallow trench isolation structures having uniform and...

2006-06-13

2006-06-13

Lebentritt, Michael (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257SE21546

Reexamination Certificate

active

07061068

ABSTRACT:
Ions are implanted into the dielectric layer and/or barrier layer over a semiconductor substrate to change the polish rates of either or both layers during formation of a shallow trench isolation (STI) structure. The ion implantation can change or affect the polish rates of the material and the polish selectivity, and reduce or minimize unwanted topography resulting from chemical mechanical polishing (CMP). After CMP, the resulting STI structure has a more uniform and smooth topography.

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