Shallow trench isolation structures comprising a graded...

Details Shallow trench isolation structures comprising a graded... Shallow trench isolation structures comprising a graded...

2006-11-28

2006-11-28

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S400000, C438S221000, C257SE21549

Reexamination Certificate

active

07141486

ABSTRACT:
A shallow trench isolation structure having a negative taper angle. A graded doped sacrificial layer is formed over a semiconductor substrate and etched to form a first trench therein having trench sidewalls that present a negative taper angle. The substrate is also etched to form a second trench therein overlying the first trench. Silicon dioxide fills both the first and the second trenches to form the shallow trench isolation structure, with the silicon dioxide in the first trench exhibiting a negative taper angle to avoid formation of polysilicon stringers during a gate polysilicon deposition.

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