Shallow trench isolation structures and a method for forming...

Details Shallow trench isolation structures and a method for forming... Shallow trench isolation structures and a method for forming...

2011-03-15

2011-03-15

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S221000, C438S700000, C438S710000

Reexamination Certificate

active

07906407

ABSTRACT:
A shallow trench isolation structure having a negative taper angle and a method for forming same. A silicon nitride layer formed over a semiconductor substrate is etched according to a plasma etch process to form a first opening therein having sidewalls that present a negative taper angle. The substrate is etched to form a trench therein underlying the first opening. Silicon dioxide fills both the opening and the trench to form the shallow trench isolation structure, with the silicon dioxide in the opening exhibiting a negative taper angle to avoid formation of conductive stringers during subsequent process steps.

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Translated abstract of document JP 07201774 A (one page) (1993).

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