Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-10-28
2009-11-17
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S374000, C257SE29020
Reexamination Certificate
active
07619294
ABSTRACT:
Provided are methods and composition for forming an isolation structure on an integrated circuit substrate. First, a trench is etched in the integrated circuit substrate. A lower dielectric layer is then formed in the trench such that the lower dielectric layer at least partially fills the trench. An upper dielectric layer is then formed over the lower dielectric layer to create an isolation structure, the upper dielectric layer and the lower dielectric layer together having an effective dielectric constant that is less than that of silicon dioxide, thereby enabling capacitance associated with the isolation structure to be reduced.
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patent: 6797652 (2004-09-01), Ngo et al.
Stanley Wolf and Richard N. Tauber, Silicon Processing For The VLSI Era, vol. I, Lattice Press, 1986, pp. 520-535.
Gopinath Venkatesh P.
Kamath Arvind
Lee Ming-Yi
Mirabedini Mohammad R.
Beyer Law Group LLP
Jefferson Quovaunda
LSI Corporation
Smith Matthew
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