Shallow trench isolation structure for semiconductor device

Details Shallow trench isolation structure for semiconductor device Shallow trench isolation structure for semiconductor device

2007-05-31

2010-06-29

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S513000

Reexamination Certificate

active

07745904

ABSTRACT:
A semiconductor device provides a transistor adjacent an isolation trench. The device may be formed by producing isolation trenches in a semiconductor substrate, filling the trenches with a filler material, creating voids near top edges of the trenches and annealing by a gaseous ambient to reflow the edges of the trenches causing the edges to become rounded and overhang the trench. The filler material may be a dielectric. The transistors which are then formed in close proximity to the trenches may include source/drain regions formed in the rounded portion of the semiconductor substrate that overhangs the trench.

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