Shallow trench isolation structure compatible with SOI...

Details Shallow trench isolation structure compatible with SOI... Shallow trench isolation structure compatible with SOI...

2011-08-23

2011-08-23

Andújar, Leonardo (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S400000, C438S424000, C257S499000

Reexamination Certificate

active

08003488

ABSTRACT:
A deep trench is formed in a semiconductor-on-insulator (SOI) substrate and a pad layer thereupon. A conductive trench fill region is formed in the deep trench. A planarizing material layer having etch selectivity relative to the pad layer is applied. A portion of the pad layer having an edge that is vertically coincident with a sidewall of the deep trench is exposed by lithographic means. Exposed portion of the pad layer are removed selective to the planarizing material layer, followed by removal of exposed portion of a semiconductor layer selective to the conductive trench fill region by an anisotropic etch. The planarizing material layer is removed and a shallow trench isolation structure having a lower sidewall that is self-aligned to an edge of the original deep trench is formed. Another shallow trench isolation structure may be formed outside the deep trench concurrently.

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