Shallow trench isolation structure and method of forming the sam

Details Shallow trench isolation structure and method of forming the sam Shallow trench isolation structure and method of forming the sam

1997-07-02

1999-09-28

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438296, H01L 21762

Patent

active

059602970

ABSTRACT:
An isolation structure is provided by a method which includes forming a pad oxide layer on a semiconductor substrate and then forming a pad nitride layer on the pad oxide layer. An opening is then formed which extends through the pad nitride layer, the pad oxide layer, and into the semiconductor substrate. The pad nitride layer is then isotropically etched, thereby pulling-back the pad nitride layer from the portion of the opening extending through the pad oxide layer. An insulating layer is formed to fill in the opening including the portion of the opening formed by the pulling-back of the pad nitride layer. The deposited insulating layer is then planarized using the pulled-back nitride layer as a stopper layer. The pulled-back pad nitride layer and the pad oxide layer are then removed.

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