Shallow trench isolation structure and formation method thereof

Details Shallow trench isolation structure and formation method thereof Shallow trench isolation structure and formation method thereof

2004-12-30

2008-03-04

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

Reexamination Certificate

active

07339251

ABSTRACT:
A method for fabricating an STI structure in a semiconductor device is disclosed. A disclosed method comprises: forming a pad oxide layer and a pad nitride layer on a substrate in sequence; patterning the pad oxide layer and the pad nitride layer to expose a predetermined part of the surface of the silicon substrate; forming a trench by etching the exposed part of the silicon substrate; depositing a nitride layer inside the trench and on the entire surface of the resulting structure; forming a thin thermal oxide layer along the interface between a silicon substrate and the thin nitride layer; and performing a wet cleaning process to make a predetermined angle in the upper part of the trench.

REFERENCES:
patent: 5801082 (1998-09-01), Tseng
patent: 6268265 (2001-07-01), Hwang et al.
patent: 6479367 (2002-11-01), Park
patent: 6500726 (2002-12-01), Lee et al.
patent: 6627514 (2003-09-01), Park et al.
patent: 6645866 (2003-11-01), Park et al.
patent: 6645867 (2003-11-01), Dokumaci et al.
patent: 6649486 (2003-11-01), Balakumar et al.
patent: 2003/0181019 (2003-09-01), Efferenn et al.
patent: 2004/0029398 (2004-02-01), Lee et al.
patent: 2004/0198019 (2004-10-01), Yasui et al.
patent: 2006/0202301 (2006-09-01), Ohta et al.

Affiliated with

Also associated with

Rating

Shallow trench isolation structure and formation method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Shallow trench isolation structure and formation method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shallow trench isolation structure and formation method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3964672