Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-01-10
2006-01-10
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S436000, C438S435000, C438S437000
Reexamination Certificate
active
06984569
ABSTRACT:
A shallow trench isolation region formed in a layer of semiconductor material. The shallow trench isolation region includes a trench formed in the layer of semiconductor material, the trench being defined by sidewalls and a bottom; a liner within the trench formed from a high-K material, the liner conforming to the sidewalls and bottom of the trench; and a fill section made from isolating material, and disposed within and conforming to the high-K liner. A method of forming the shallow trench isolation region is also disclosed.
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Karlsson Olov B.
Krivokapic Zoran
Wang HaiHong
Xiang Qi
Yu Bin
Advanced Micro Devices , Inc.
Schillinger Laura M.
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