Shallow trench isolation (STI) fabrication method for semiconduc

Details Shallow trench isolation (STI) fabrication method for semiconduc Shallow trench isolation (STI) fabrication method for semiconduc

1998-06-12

2000-05-16

Nelms, David

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438423, 438424, 438432, 438524, 438532, H01L 2176

Patent

active

060636912

ABSTRACT:
An STI fabrication method for a semiconductor device is disclosed, which includes the steps of forming a trench on a semiconductor substrate, forming a conductive film on the trench, ion-implanting a germanium into the conductive film, and oxidizing the conductive film.

REFERENCES:
patent: 5190889 (1993-03-01), Poon et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5786263 (1998-07-01), Perera

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