Shallow trench isolation process and structure with...

Details Shallow trench isolation process and structure with... Shallow trench isolation process and structure with...

2004-01-12

2008-12-09

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S430000

Reexamination Certificate

active

07462549

ABSTRACT:
A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The strained material is formed after the trench is formed. The process can be utilized on a compound semiconductor layer above a box layer.

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