Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1998-07-16
1999-11-23
Fahmy, Wael
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438424, 438435, 438437, 438438, H01L 218224
Patent
active
059899786
ABSTRACT:
A method is described for forming MOSFETs with shallow trench isolation wherein the abrupt corners introduced by anisotropically etching the silicon trenches are modified by an oxidation step which rounds off the corners and also reduces the effect of tensile stresses caused by the densified trench filler material. The method selectively exposes the corner regions to an oxidation whereby the formation of an oxide birdsbeak modulates the corners and introduces a compressive stress component in the corner region. Several variations of the procedure are disclosed, including embodiments wherein birdsbeaks extending in both a vertical and horizontal directions from the corners are employed. The channel and gate oxide edges of MOSFETs extend to these corners. By attenuating the abrupt corners and reducing the mechanical stresses, gate oxide integrity is improved and anomalous sub-threshold currents of MOSFETs formed are abated.
REFERENCES:
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5492858 (1996-02-01), Bose et al.
patent: 5641704 (1997-06-01), Paoli et al.
patent: 5643823 (1997-07-01), Ho et al.
Chartered Semiconductor Manufacturing Ltd.
Fahmy Wael
Pham Long
Pike Rosemary L. S.
Saile George O.
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