Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-01-22
2008-01-22
Malsawma, Lex (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S386000, C257SE21540
Reexamination Certificate
active
11339874
ABSTRACT:
A method for forming shallow trenches having different trench fill materials is described. A stop layer is provided on a substrate. A plurality of trenches is etched through the stop layer and into the substrate. A first layer is deposited over the stop layer and filling said trenches. The first layer is planarized to the stop layer leaving the first layer within the trenches. The first layer is removed from a subset of the trenches. A second layer is deposited over the stop layer and within the subset of trenches and planarized to the stop layer leaving the second layer within the subset of trenches to complete fabrication of shallow trenches having different trench fill materials. The trench fill materials may be dielectric layers having different dielectric constants or they may be a dielectric layer and a conducting layer. The method can be extended to provide three or more different trench fill materials.
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Malsawma Lex
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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