Fishing – trapping – and vermin destroying
Patent
1993-09-09
1995-05-09
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437228, 437233, 437 67, 437 72, 148DIG50, H01L 21302
Patent
active
054139660
ABSTRACT:
A trench mask is formed of two dissimilar layers of material deposited over a substrate. The lower of the two layers is an insulating layer such as silicon dioxide or silicon nitride, or combinations of both, and the upper of the two layers is doped or undoped polysilicon. Together, the two layers are patterned in a first etch step to form a trench mask for subsequent etching of trenches in the substrate. The upper layer is deposited to a thickness "t" related to the desired depth "d" of the trenches to be etched. In a second etch step, the trenches are formed in the substrate. In the case of substantially uniform etching of the polysilicon and the substrate, the thickness of the polysilicon is substantially equal to the desired trench depth. In the case of unequal etching of the polysilicon and the substrate, the thickness of the polysilicon is based on the etch rate disparity. In either case, trench etch endpoint detection is provided by clearing of the polysilicon and consequent exposure of the lower layer of the trench mask. In both cases, loading effects during the second etch step are alleviated, or completely eliminated, because both the upper layer and the substrate are silicon-based materials.
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Dang Trung
Hearn Brian E.
LSI Logic Corporation
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