Shallow PN junction formed by in situ doping during...

Details Shallow PN junction formed by in situ doping during... Shallow PN junction formed by in situ doping during...

2009-07-17

2011-11-08

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Having organic semiconductive component

C438S758000, C257SE51040

Reexamination Certificate

active

08053273

ABSTRACT:
A silicon/carbon alloy may be formed in drain and source regions, wherein another portion may be provided as an in situ doped material with a reduced offset with respect to the gate electrode material. For this purpose, in one illustrative embodiment, a cyclic epitaxial growth process including a plurality of growth/etch cycles may be used at low temperatures in an ultra-high vacuum ambient, thereby obtaining a substantially bottom to top fill behavior.

REFERENCES:
patent: 7238561 (2007-07-01), Zhang et al.
patent: 2006/0172511 (2006-08-01), Kammler et al.
patent: 2007/0032003 (2007-02-01), Zhang et al.
patent: 2007/0254421 (2007-11-01), Tsai et al.
patent: 2009/0302348 (2009-12-01), Adam et al.
patent: 102008047127 (2009-12-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 035 812.6-33 dated Aug. 10, 2010.

Affiliated with

Also associated with

Rating

Shallow PN junction formed by in situ doping during... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Shallow PN junction formed by in situ doping during..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shallow PN junction formed by in situ doping during... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4290141