Shallow ohmic contacts to N-GaAs

Details Shallow ohmic contacts to N-GaAs Shallow ohmic contacts to N-GaAs

1991-03-18

1992-03-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437187, 437189, 437190, 148DIG20, 357 65, 357 71, H01L 2144, H01L 2148

Patent

active

051008351

ABSTRACT:
The formation of low-resistance ohmic contacts to N-GaAs is provided by sequential deposition of Pd/Au-Ge/Ag/Au and rapid thermal annealing.

REFERENCES:
patent: 4011583 (1977-03-01), Levinstein et al.
patent: 4186410 (1980-01-01), Cho et al.
patent: 4301188 (1981-11-01), Niehaus
patent: 4310570 (1982-01-01), Calviello
patent: 4366186 (1982-12-01), Keramidas et al.
patent: 4471005 (1984-09-01), Cheng et al.
patent: 4989065 (1991-01-01), Tsuchimoto et al.

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