Stock material or miscellaneous articles – All metal or with adjacent metals – Composite; i.e. – plural – adjacent – spatially distinct metal...
Patent
1991-06-07
1992-11-03
Lewis, Michael
Stock material or miscellaneous articles
All metal or with adjacent metals
Composite; i.e., plural, adjacent, spatially distinct metal...
257762, H01L 2912
Patent
active
051607930
ABSTRACT:
Formation of shallow ohmic contacts with low contact resistance on n-Al.sub.x Ga.sub.1-x As by sequential deposition of Pd/Au-Ge/Ag/Au and rapid thermal annealing.
REFERENCES:
patent: 3716907 (1973-02-01), Anderson
patent: 4042951 (1977-08-01), Robinson et al.
patent: 4186410 (1980-01-01), Cho et al.
patent: 4989065 (1991-01-01), Tsuchimoto et al.
patent: 5077599 (1991-12-01), Yano et al.
patent: 5100835 (1992-03-01), Zheng
"AuNiGe Contacts to GaAs"; IBM Technical Disclosure Bulletin; vol. 28, No. 7; Dec. 1985; pp. 3183-3184.
"Ohmic Contact to Gallium Phosphide"; IBM Technical Disclosure Bulletin; vol. 11, No. 11; Apr. 1969; p. 1475.
Sands, et al.; "Ni, Pd and Pt on GaAs; A comparative study of interfacial structures, compositions and reacted film morphologies".
J. Mater, Res. 2(2), Mar./Apr. 1987; pp. 262-275.
Devlin, et al.; "A Molybdenum Source, Gate and Drain Metalization System For GaAs MESFET Layers Grown by Molecular Beam Epitaxy"; Oct. 1979; pp. 823-829.
Barnes, et al.; "Nonalloyed Ohmic Contacts to n-GaAs by Molecular Beam Epitaxy"; Appl. Phys. Lett., 33(7); Oct. 1978; pp. 651-653.
Salmon, et al.; "The Effect of Aluminum Composition on Silicon Donar Behavior in Al.sub.x Ga.sub.1 -xAs"; J. Vac. Sci. Technol. B2, Apr.-Jun. 1984; pp. 197-200.
Pamish; "Phase Equilibria in the System of Al-Ga-As-Sn and Electrical Properties of Sn-doped Liquid Phase Epitaxial Al.sub.x Ga.sub.x-1 As"; J. Appl. Phys., vol. 44, No. 6; Jun. 1973; pp. 2667-2674.
Marshall, et al.; Planar Ge/Pd and Alloyed Al-Ge-Ni Ohmic Contacts to n-Al.sub.y Ga.sub.x-1 As (0.ltoreq.x.ltoreq.0.3); Appl. Physical Letters 54(8), Feb. 1989; pp. 721-723.
E. D. Marshall, W. X. Chen, C. S. Wu, S. S. Lau and T. F. Kuech, Appl. Phys, Lett. 47, 298 (1985).
Eastman Kodak Company
Lewis Michael
Lund Valerie
Owens Raymond L.
LandOfFree
Shallow ohmic contacts to n-Al.sub.x Ga.sub.1-x As does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Shallow ohmic contacts to n-Al.sub.x Ga.sub.1-x As, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shallow ohmic contacts to n-Al.sub.x Ga.sub.1-x As will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2051224