Shallow junction depth measurement method

Measuring and testing – Coating material: ink adhesive and/or plastic

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73104, 436 2, 436164, G01B 1102

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active

045107980

ABSTRACT:
A technique for accurately and repeatably measuring the depths of junctions between adjacent layers in a semiconductor wafer, even when the depths are relatively shallow. A groove is formed in the surface of the wafer, with a cylindrical grooving tool that is inclined to the planar surface of the wafer, to form a groove that is tapered in width and depth. The wafer is then conventionally treated to enhance the contrast between the layers as they are exposed on the groove surface. Since each planar junction intersects the groove surface at an angle, the corresponding junction line appears as a part of an ellipse, and exhibits a well defined peak at the center of the groove. Direct measurement of the depth of the groove at this point, using a standard profilometer, provides the desired junction depth.

REFERENCES:
patent: 3490873 (1970-01-01), Corl
patent: 4103542 (1978-08-01), Wheeler et al.
patent: 4235018 (1980-11-01), Saberg
patent: 4391044 (1973-07-01), Wheeler
Hardwick, Rev. Sci. Instrum., vol. 42, No.4, (Apr. 1971), pp. 541-543.
Yeh, IBM Technical Disclosure Bulletin, vol. 5, No. 5, Oct. 1962, "Portraying PN Junctions in Gallium Arsenide".

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