Shallow impurity neutralization

Details Shallow impurity neutralization Shallow impurity neutralization

1985-04-03

1986-09-09

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 148DIG84, 148DIG128, 357 91, H01L 21265, H01L 21263

Patent

active

046107312

ABSTRACT:
A process is described for fabricating semiconductor devices in which atomic hydrogen is used to neutralize shallow donors in III-V semiconductor compounds so as to make certain areas exhibit high resistance. Also described is reverse neutralization in which heat is used to convert neutralized regions to regions with n-type conductivity.

REFERENCES:
patent: 4266986 (1981-05-01), Benton et al.
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4364779 (1982-12-01), Kamgar et al.
patent: 4391651 (1983-07-01), Yoder
patent: 4394180 (1983-07-01), Dearnaley et al.
patent: 4460412 (1984-07-01), Imura et al.
patent: 4469528 (1984-09-01), Berth
patent: 4522657 (1985-06-01), Rohtagi et al.
patent: 4539743 (1985-09-01), Anthony et al.
Rao et al. in Ion Implantation in Semiconductors, ed. Chernow et al., Plenum, N.Y., 1977, p. 77.
Martin et al., J. Appl. Phys. 53 (1982) 8706.
Favennec et al., Rev. Phys. Appl. 19 (1984) 191.
Blood in GaAs and Related Compounds, 1980, ed. Thim Inst. of Phys. Conf. #56, Bristol, p. 251.
Newman et al., Radiation Effects, 53 (1980) 41.
Ohmura et al., Phys. Stat. Sol. 15a (1973) 93.
Physica Status of Solidi A, vol. 74, pp. 329-341 (1982), by T. S. Shi et al.
IEEE Transactions on Nuclear Science, vol. NS-29, No. 1, pp. 738-744 (Feb. 1982), by W. L. Hansen et al.
Physics Letters, vol. 93A, No. 6, pp. 303-304 (Jan. 24, 1983), by J. W. Corbett et al.
Nuclear Instruments and Methods, vol. 182, pp. 337-349 (1981), by P. S. Peercy.
Applied Physics Letters, vol. 36, No. 8, pp. 670-671, (Apr. 15, 1980), by J. L. Benton et al.
Physical Review B, vol. 26, No. 12, pp. 7105-7108, (Dec. 15, 1982), by S. J. Pearton et al.
Applied Physics Letters, vol. 40, No. 3, pp. 253-255, Feb. 1, 1982, by S. J. Pearton.
Applied Physics Letters, vol. 41, No. 11, pp. 1078-1080, Dec. 1, 1982, by J. Lagowski et al.
Journal of Applied Physics, vol. 53, No. 6, pp. 4509-4511, Jun. 1982, by S. J. Pearton.
Journal of Applied Physics, vol. 52, No. 2, pp. 1050-1055, 1981, by C. H. Seager et al.
Applied Physics Letters, vol. 43, No. 2, pp. 204-206, Jul. 15, 1983, by C. Sah et al.
Physical Review Letters, vol. 51, No. 24, pp. 2224-2225, Dec. 11, 1983, by J. I. Pankove et al.
Applied Physics Letters, vol. 44, No. 6, pp. 606-608, Mar. 15, 1984, by W. L. Hansen et al.
Journal of Vacuum Science and Technology, vol. 20, No. 1, Jan. 1982, "Hydrogen Plasma Etching of Semiconductors and Their Oxides", by R. P. H. Chang et al.
Journal of Applied Physics, vol. 55, pp. 1221-1223, 1984, by S. J. Pearton et al.

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