Shallow-homojunction solar cells

Details Shallow-homojunction solar cells Shallow-homojunction solar cells

1979-03-21

1980-10-14

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136256, 136262, 204 38R, 204 38A, 357 30, H01L 3106

Patent

active

042279410

ABSTRACT:
Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n.sup.+ /p/p.sup.+ structure in which the n.sup.+ top layer is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer. An anodic antireflection coating is applied over the n.sup.+ top layer, and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.

REFERENCES:
S. C. Tsaur et al., "Theoretical & Experimental Results for GaAs Solar Cells", 1972 Symposium on GaAs, U.K. Institute of Physics Conference Series No. 17, pp. 156-167.
H. J. Hovel et al., "Improved GaAs Solar Cells With Very Thin Junctions", _Conf. Record, 12th IEEE Photovoltaic Specialists Conf. (1976), pp. 945-947.
J. Mandelkorn et al., "Advances in the Theory & Application Of BSF Cells", _Conf. Record, 11th IEEE Photovoitaic Specialists Conf. (1975), pp. 36-39.

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