Shallow drain extension formation by angled implantation

Details Shallow drain extension formation by angled implantation Shallow drain extension formation by angled implantation

1995-06-07

1999-08-10

Niebling, John

Fishing, trapping, and vermin destroying

437 34, 437 44, 437 56, H01L 21265

Patent

active

059358670

ABSTRACT:
A process for forming a shallow, lightly doped region in a semiconductor device. The method comprises the steps of providing a semiconductor substrate having a surface; growing an oxide layer on the substrate, the oxide having a thickness; depositing a layer of polysilicon on the oxide; patterning the polysilicon layer and the oxide layer to provide a gate structure; and implanting into the substrate a source and a drain region about the gate structure at an angle less than 90 degrees with respect to the surface of the substrate.

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