Shadow projection mask for ion implantation and ion beam lithogr

Details Shadow projection mask for ion implantation and ion beam lithogr Shadow projection mask for ion implantation and ion beam lithogr

1982-10-12

1984-05-15

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, 430323, 156643, 427 38, G03F 900

Patent

active

044488653

ABSTRACT:
A projection mask comprises a thin P.sup.+ -doped silicon layer with through holes adapted to the mask pattern, a grid supporting this layer having silicon ribs. On at least on its side facing away from the grid, the layer has a layer, which is at least as thick as to prevent the implanting of ions in the silicon layer. At least the mask surface exposed to ion irradiation is electrically and thermally conductive, and mechanically resistant. The coating of the silicon frame of the mask is such that it does not cause any mask deformation caused by temperature and/or through inherent tensions of the coating. Preferred absorbing materials are gold, silver, platinum, tungsten, and tantalum, and mechanically resistant materials are preferably carbon, molybdenum, titanium, tungsten, and tantalum. In operation, the mask with grid is placed onto the substrate to be irradiated, and subsequently blanket-illuminated with an ion beam, or scanned line-by-line until each point on the mask has been covered by the beam path.

REFERENCES:
patent: 3971684 (1976-07-01), Muto
Suzuki et al., Conference: Electrochemical Society, Incorporated, Spring Meeting, Montreal, Canada, May 9-14, 1982, pp. 518-519.
Furuya et al., Fujitsu Sci. & Tech. J. (Japan) vol. 15 (4), Dec. 1979.

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