Shadow mask and method of producing the same

Details Shadow mask and method of producing the same Shadow mask and method of producing the same

2005-05-17

2005-05-17

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S706000, C216S012000, C216S041000

Reexamination Certificate

active

06893976

ABSTRACT:
A method of producing a shadow mask having a set of apertures (the set of apertures including a given aperture with an aperture boundary) uses a wafer having at least a first silicon layer, a second silicon layer, and an insulator layer between the first and second silicon layers. A first portion of the first silicon layer within the aperture boundary is removed. This produces a second portion of the first silicon layer, which remains within the aperture boundary. The second silicon layer within the aperture boundary is removed, as well as the insulator layer within the aperture boundary. The second portion of the first silicon layer remaining within the aperture boundary then is removed.

REFERENCES:
patent: 6287885 (2001-09-01), Muto et al.

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