Sezawa surface-acoustic-wave device using ZnO(0001)/SiO.sub.2 /

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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333154, H01L 4108

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active

045673926

ABSTRACT:
A surface acoustic wave device comprises a silicon substrate, a silicon dioxide layer provided on the silicon substrate, a zinc oxide layer provided on the silicon dioxide layer and input and output electrodes provided on the zinc oxide layer. The silicon substrate is cut by a crystalline surface substantially equivalent to the (100)- or (110)-surface, and the zinc oxide layer is such that its crystalline surface substantially equivalent to the (0001)-surface is parallel to the cut-surface of the silicon substrate, so that a surface acoustic wave entered from the input electrode is propagated to the output electrode in a direction substantially equivalent to the [011]- or [001]-axis of the silicon substrate.

REFERENCES:
patent: 4037176 (1977-07-01), Ono et al.
patent: 4194171 (1980-03-01), Jelks
patent: 4480209 (1984-10-01), Okamoto et al.
Monolithic ZnO on Si Schottky Diode Storage Correlator, by R. L. Thornton et al., IEEE Ultrasonics Symposium, Boston, Ma., Nov. 5-7, 1980, pp. 124-128.
Monolithic Sezawa Wave Storage Correlators and Convolvers, by J. E. Bowers et al., IEEE Ultrasonics Symposium, Boston, Ma., Nov. 5-7, 1980, pp. 118-123.

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